Laterally gated quantum dots: theory, fabrication, and applications

Abstract

Laterally gated quantum dots (LGQDs) have emerged as a crucial platform in quantum electronics, particularly in quantum computation and spintronics. These nanostructures confine charge carriers in two-dimensional electron gases (2DEGs) using electrostatic gates, allowing precise control over quantum states. This article explores the theoretical framework governing LGQDs, fabrication techniques, and their potential applications in quantum computing, charge sensing, and nanoelectronic devices.