Laterally gated quantum dots: theory, fabrication, and applications

Публікація:
Laterally gated quantum dots: theory, fabrication, and applications

dc.contributor.author	Chubukin, O. S.
dc.contributor.author	Dotsenko, М. S.
dc.date.accessioned	2025-04-19T14:26:47Z
dc.date.available	2025-04-19T14:26:47Z
dc.date.issued	2025
dc.description.abstract	Laterally gated quantum dots (LGQDs) have emerged as a crucial platform in quantum electronics, particularly in quantum computation and spintronics. These nanostructures confine charge carriers in two-dimensional electron gases (2DEGs) using electrostatic gates, allowing precise control over quantum states. This article explores the theoretical framework governing LGQDs, fabrication techniques, and their potential applications in quantum computing, charge sensing, and nanoelectronic devices.
dc.identifier.citation	Chubukin O. S. Laterally gated quantum dots: theory, fabrication, and applications / O. S. Chubukin, М. S. Dotsenko // Радіоелектроніка та молодь у XXI столітті : матеріали 29-го Міжнар. молодіж. форуму, 16–19 квітня 2025 р. – Харків : ХНУРЕ, 2025. – Т. 2. – С. 107–109.
dc.identifier.uri	https://openarchive.nure.ua/handle/document/30405
dc.language.iso	en
dc.publisher	ХНУРЕ
dc.subject	quantum dots
dc.subject	LGQDs
dc.title	Laterally gated quantum dots: theory, fabrication, and applications
dc.type	Thesis
dspace.entity.type	Publication