Перспективи використання НВЧ резонаторних сенсорів для діагностики багатошарових об’єктів

Abstract

This work discusses the prospects for using microwave local sensors to determine the doping profile of semiconductor objects in the scanning microwave microscopy (SMM). Quantitative results for the electric field distribution in a three-layer structure of an object with different degrees of doping are presented. The influence of the electro physical parameters of objects on the field distribution in the probe-object system has been studied. Options for implementing 3D micro scanning of multilayer objects are proposed. It has been shown that SMM makes it possible to determine the profile of the electrical parameters of the objects by depth with locality over a wide range.