Оптимизация оптоэлектронных характеристик гетероструктур на основе аморфного и кристаллического кремния

Abstract

In the given work are lead researches of various physical processes in geterostmctures for the further improvement optoelectronics parameters. Researches of temperature, spectral, structural, electrophysical dependences thin films of amorphous silicon were made. The physical and mathematical model and a technique of numerical researches photocarriers current in thin films of amorphous hydrogenised silicon is described. Calculations of photocurrent dependence from film thickness are presented