Публікація: Degradations of semicondactor devices under pulsed heat overloading
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Анотація
The linear heat model of degradations of semiconductor devices under pulsed electric overloading has been constructed. Expressions for temporal depende ncies of the temperature under different forms of pulse of current are obtained.
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degradations, semicondactor devices , pulsed heat overloading
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Chumakov V. I. Degradations of semicondactor devices under pulsed heat overloading / V. I. Chumakov // Problems of Atomic Science and Technology. - 2000. - N 3. - P. 96-98. - Series: Plasma Physics (5)