Degradations of semicondactor devices under pulsed heat overloading

Chumakov, V. I.

Публікація:
Degradations of semicondactor devices under pulsed heat overloading

dc.contributor.author	Chumakov, V. I.
dc.date.accessioned	2018-01-25T14:22:12Z
dc.date.available	2018-01-25T14:22:12Z
dc.date.issued	2000
dc.description	References: 1. Wunsch D.S., Bell R.R. IEEE Trans. on Nuclear. Sci. 1968.NS.15, No.6. P.244-259. 2. Dwyer V.M., Franklin A.J., Campbell D.S. IEEE Trans. on Electron Dev. 1990, ED.37 N î .11, pp.2381-2387. 3. Simulation of radioelectronic devices thermal failures / V.I. Chumakov // Radioelektronika i informatika ,1992, N 2, p.31-37. 4. Virchenko Yu.P., Vodyanitskii À.A., Kovtun G.P. Preprint, Kharkov: KhIFT, 1992, 32 p. (in Russian). 5. Galaktionov V.À., Kurdyumov S.P., Posashkov S.À Samarskii A..À. In : Mathematic modeling. Processes in nonlinear medium. Moskow: Nauka, 1986, p.142-182 (in Russian). 6. Blakemore J. Solid state physics. Moskov: Mir. 1988. (in Russian). 7. Carroll J. Microwave generator on hot electrons. Moskow: Mir, 1972.	uk_UA
dc.description.abstract	The linear heat model of degradations of semiconductor devices under pulsed electric overloading has been constructed. Expressions for temporal depende ncies of the temperature under different forms of pulse of current are obtained	uk_UA
dc.identifier.uri	http://openarchive.nure.ua/handle/document/4229
dc.relation.ispartofseries	Problems of Atomic Science and Technology. 2000. N 3. Series: Plasma Physics (5). p. 96 - 98;
dc.subject	DEGRADATIONS, SEMICONDUCTOR DEVICES, PULSED HEAT OVERLOADING	uk_UA
dc.title	Degradations of semicondactor devices under pulsed heat overloading	uk_UA
dc.title.alternative	Degradations of semicondactor devices under pulsed heat overloading	uk_UA
dc.type	Article	uk_UA
dspace.entity.type	Publication