Degradations of semicondactor devices under pulsed heat overloading

Публікація:
Degradations of semicondactor devices under pulsed heat overloading

dc.contributor.author	Chumakov, V. I.
dc.date.accessioned	2018-01-25T14:22:12Z
dc.date.available	2018-01-25T14:22:12Z
dc.date.issued	2000
dc.description.abstract	The linear heat model of degradations of semiconductor devices under pulsed electric overloading has been constructed. Expressions for temporal depende ncies of the temperature under different forms of pulse of current are obtained.	uk_UA
dc.identifier.citation	Chumakov V. I. Degradations of semicondactor devices under pulsed heat overloading / V. I. Chumakov // Problems of Atomic Science and Technology. - 2000. - N 3. - P. 96-98. - Series: Plasma Physics (5)
dc.identifier.uri	http://openarchive.nure.ua/handle/document/4229
dc.subject	degradations
dc.subject	semicondactor devices
dc.subject	pulsed heat overloading
dc.title	Degradations of semicondactor devices under pulsed heat overloading	uk_UA
dc.title.alternative	Degradations of semicondactor devices under pulsed heat overloading	uk_UA
dc.type	Article	uk_UA
dspace.entity.type	Publication