Публікація: Degradations of semicondactor devices under pulsed heat overloading
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Дата
2000
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Анотація
The linear heat model of degradations of semiconductor devices under pulsed electric overloading has
been constructed. Expressions for temporal depende
ncies of the temperature under different forms of pulse of
current are obtained
Опис
References:
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Preprint, Kharkov: KhIFT, 1992, 32 p. (in Russian).
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Samarskii A..À. In : Mathematic modeling. Processes in
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Ключові слова
DEGRADATIONS, SEMICONDUCTOR DEVICES, PULSED HEAT OVERLOADING