Построение математической модели технологического процесса нанесения наноструктурированных диэлектрических пленок, полученных методом ионно-плазменного распыления

Abstract

The aim is to construct a mathematical model of the process of obtaining nanostructure dielectric films obtained by ion - plasma sputtering SiO2, Si3N4, SixOyNz, and structures based on them. To obtain a mathematical model of the quality of each film explicitly used the results obtained by us in the course of a three-factor, three-level experiment with random variation in the fourth factor - disturbing effect. During the experiment, the film was deposited at three different values of the control inputs, and all possible combinations of these values. Properties of these films are well understood, and they are widely used in semiconductor electronics.