Застосування неінвазивного нвч-фотомодуляційного методу для дослідження рекомбінаційних процесів в напівпровідниках різної кристалічної структури

Abstract

The study presents a comparative analysis of the calculated phase shift of the photoconductivity signal for different types of semiconductor materials, including monocrystalline (Si, GaAs), polycrystalline (poly-Si, CdTe), and amorphous (a Si) structures. The influence of crystalline structure, defect density, and carrier recombination mechanisms is investigated. The dependence of the phase shift on the excitation wavelength is examined, enabling the evaluation of key material parameters such as carrier lifetime, surface recombination velocity, and the efficiency of carrier generation and transport in various structures. The obtained results can be utilized to optimize the manufacturing technologies of photodetectors and improve the performance of semiconductor sensors.