Hopping Conductivity Mechanism in Cd3As2 Films Prepared by Magnetron Sputtering

Glukhov, O. V.

Публікація:
Hopping Conductivity Mechanism in Cd3As2 Films Prepared by Magnetron Sputtering

dc.contributor.author	Glukhov, O. V.
dc.date.accessioned	2020-07-30T18:14:16Z
dc.date.available	2020-07-30T18:14:16Z
dc.date.issued	2020
dc.description.abstract	Cadmium arsenide films on oxidized silicon substrates were obtained by RF magnetron sputtering. The structure and morphology of the surface were studied by atomic force microscopy (AFM) and Raman spectroscopy (RS). The Raman spectrum contains peaks characteristic for Cd3As2 films at 194, 249, and 303 cm − 1. The carrier mobility in the samples was 0.15-1.7·103 cm2V − 1s − 1 at concentrations of 0.7- 4.4·1019 cm − 3. It has been established that for the sample No 1 in the temperature range T  10-15 K, the variable-range hopping (VRH) conductivity mechanism according to the Mott law is implemented. This can be explained by the fact that a microscopic disorder becomes important for electron localization in this temperature region. This is due to a decrease in temperature or an increase in the degree of disorder. In this case, the jump becomes possible only inside the Mott energy band near the Fermi level. The charge transfer in sample No 2 at T  220-300 K is carried out by the VRH conductivity of the jump over localized states lying in a narrow energy band near the Fermi level. These states can be created by grain boundaries and dislocations. The relations between the values of the Coulomb gap Δ and the zone width of localized states W are consistent with the corresponding conduction mechanism.	uk_UA
dc.identifier.citation	O.V. Glukhov / V.S.Zakhvalinskii, E.A.Pilyuk, T.B. Nikulicheva, S.V. Ivanchikhin, M.N. Yaprintsev,I.Yu. Goncharov, D.A. Kolesnikov, A.A. Morocho, О.V. Glukhov. Hopping Conductivity Mechanism in Cd3As2 Films Prepared by Magnetron Sputtering. // Journal of nano- and electronic physics. - Vol. 12. - No. 3. - p. 03029(4pp).	uk_UA
dc.identifier.other	DOI: 10.21272/jnep.12(3).03029
dc.identifier.uri	http://openarchive.nure.ua/handle/document/12597
dc.language.iso	en	uk_UA
dc.subject	Cadmium arsenide	uk_UA
dc.subject	Dirac semimetals	uk_UA
dc.subject	Thin films	uk_UA
dc.subject	Hopping conductivity	uk_UA
dc.title	Hopping Conductivity Mechanism in Cd3As2 Films Prepared by Magnetron Sputtering	uk_UA
dc.type	Article	uk_UA
dspace.entity.type	Publication