Публікація:
Influence of anomalous dispersion mirror properties on the quantum efficiency of InGaAs/GaAs resonant cavity photodetector

dc.contributor.authorGryshchenko, S. V.
dc.contributor.authorDemin, A.
dc.contributor.authorLysak, V.
dc.contributor.authorSukhoivanov, I.
dc.date.accessioned2016-10-03T10:34:50Z
dc.date.available2016-10-03T10:34:50Z
dc.date.issued2011
dc.description.abstractWe present a theoretical analysis of the quantum efficiency of a resonant cavity enhanced InGaAs/GaAs P-i-n photodetector (PD) for the ultrashort optical connections. The numerical method of calculation of quantum efficiency combining a transfer matrix method and an energy conservation law is offered. Using anomalous dispersion (AD) mirror flattopped QE spectrum has been obtained. Conditions for ideal flattopped spectral response have been received. A design with a maximum QE of 93.5% and 3 nm bandwidth at 0.02 dB below the peak is presented.uk_UA
dc.identifier.urihttp://openarchive.nure.ua/handle/document/3122
dc.language.isoenuk_UA
dc.publisherJ. Opto-Electronics Reviewuk_UA
dc.subjectresonant-cavity enhanced photodetectoruk_UA
dc.subjectquantum efficiencyuk_UA
dc.titleInfluence of anomalous dispersion mirror properties on the quantum efficiency of InGaAs/GaAs resonant cavity photodetectoruk_UA
dc.typeArticleuk_UA
dspace.entity.typePublication

Файли

Оригінальний пакет
Зараз показано 1 - 1 з 1
Завантаження...
Зображення мініатюри
Назва:
paper_with figures.pdf
Розмір:
329.18 KB
Формат:
Adobe Portable Document Format
Ліцензійний пакет
Зараз показано 1 - 1 з 1
Немає доступних мініатюр
Назва:
license.txt
Розмір:
9.42 KB
Формат:
Item-specific license agreed upon to submission
Опис: