Інформаційна система реєстрації випромінювання з урахуванням моделювання та прогнозування властивостей наноструктур

Abstract

The study explores information systems for radiation detection in nanostructures, emphasizing semiconductor modeling for optoelectronic applications. Key factors influencing hotodetector accuracy and sensitivity, including internal noise and active area size, are analyzed. Statistical modeling demonstrates the advantages of CdHgTe-based detectors due to significantly lower noise levels compared to Si and GaAs. The results highlight the potential of information technologies in optimizing weak signal detection and advancing modern optoelectronic systems.