Международная научная конференция "Функциональная база наноэлектроники" Харьков-Кацивели 2011-2012

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Локальная СВЧ модификация материалов и структур микро- и наноэлектроники
(ХНУРЭ, 2012) Гордиенко, Ю. Е.; Мельник, С. И.; Слипченко, Н. И.
A preliminary analysis of the possibilities of thermal effects on semiconductors and semiconductor films local microwave field shows that the existing models and experimental results provide enough information about the possibilities of modifying the properties of semiconductors as a result of heating, but do not take into account the specific locality of microwave heating in the micro and nano-meter scale. The approximate analytical model of heat, allowing to obtain estimates of the results and to optimize the design of probes. Based on the finite element method developed a numerical model that allows to explore different probe design, facilities and heating conditions in a wide range. The possibility of its work are illustrated by blow-up regime, which allows localized heating zone in the region, significantly less than the initial half-width of the distribution of the microwave field.