Перегляд за автором "Gryshchenko, S. V."
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Публікація Influence of anomalous dispersion mirror properties on the quantum efficiency of InGaAs/GaAs resonant cavity photodetector(J. Opto-Electronics Review, 2011) Gryshchenko, S. V.; Demin, A.; Lysak, V.; Sukhoivanov, I.We present a theoretical analysis of the quantum efficiency of a resonant cavity enhanced InGaAs/GaAs P-i-n photodetector (PD) for the ultrashort optical connections. The numerical method of calculation of quantum efficiency combining a transfer matrix method and an energy conservation law is offered. Using anomalous dispersion (AD) mirror flattopped QE spectrum has been obtained. Conditions for ideal flattopped spectral response have been received. A design with a maximum QE of 93.5% and 3 nm bandwidth at 0.02 dB below the peak is presented.Публікація Quantum Efficiency of the InGaAS/GaAs Resonant Photodetector for the Ultrashort Optical Connections(Begell House, Inc., 2007) Gryshchenko, S. V.; Dyomin, A. A; Lysak, V. V.; Petrov, S. I.A theoretical analysis has been conducted for the quantum efficiency of an InGaAs/GaAs resonant cavity p-i-n photodetector for the ultrashort optical connections. The quantum efficiency at resonance has been estimated. The mathematical model allows for the physical parameters of the photodetector, radiation wavelength, mirror reflectivity and optical absorption in all detector layers. The relations between the quantum efficiency and the reflection coefficient of the upper mirror of the Al0.65Ga0.35As/GaAs resonator in combination with other variable parameters of the structure have been determined. The magnitudes of the upper mirror reflection coefficient depending on physical parameters of the structure have been found.