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|Title:||Joint influence of internal fields and indium surface segregation on band structure in ingan/gan single quantum well|
|Abstract:||In this paper, authors investigate the influence of the indium surface segregation and piezoelectric polarization on the band structure of the InGaN/GaN single quantum well. The obtained results evidence that the indium surface segregation leads to the blue shift of the transition energy (70 meV for the segregation length 1nm at both heterointerfaces) while the piezoelectric polarization itself causes the read shift. Joint action of both effects influence on the potential profile determining the linear dependence of the transition energy on the width of the quantum well. The piezoelectric polarization is prevailed for the high indium amount, and the indium surface segregation is dominated for the low indium amount in the In(x)Ga(1-x)N alloy.|
|Appears in Collections:||Наукові публікації|
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