Joint influence of internal fields and indium surface segregation on band structure in ingan/gan single quantum well

Публікація:
Joint influence of internal fields and indium surface segregation on band structure in ingan/gan single quantum well

dc.contributor.author	Klymenko, M.
dc.contributor.author	Petrov, S.
dc.contributor.author	Shulika, O.
dc.date.accessioned	2016-10-03T10:41:19Z
dc.date.available	2016-10-03T10:41:19Z
dc.date.issued	2010
dc.description.abstract	In this paper, authors investigate the influence of the indium surface segregation and piezoelectric polarization on the band structure of the InGaN/GaN single quantum well. The obtained results evidence that the indium surface segregation leads to the blue shift of the transition energy (70 meV for the segregation length 1nm at both heterointerfaces) while the piezoelectric polarization itself causes the read shift. Joint action of both effects influence on the potential profile determining the linear dependence of the transition energy on the width of the quantum well. The piezoelectric polarization is prevailed for the high indium amount, and the indium surface segregation is dominated for the low indium amount in the In(x)Ga(1-x)N alloy.	uk_UA
dc.identifier.uri	http://openarchive.nure.ua/handle/document/3123
dc.language.iso	en	uk_UA
dc.publisher	Photoelectronics	uk_UA
dc.title	Joint influence of internal fields and indium surface segregation on band structure in ingan/gan single quantum well	uk_UA
dc.type	Article	uk_UA
dspace.entity.type	Publication