Аналитическая модель гетероперехода a-Si:h/c-Si солнечного элемента

Abstract

The given work is devoted to investigation and research of analytical model of a-Si:H/c-Si heterojunction, used in solar cells. The model based on diffusion electron/hole motion mechanism. The analytical expressions of voltage-current characteristics are presented. Computer simulations have been carried out in order to attempt the optimal configuration of layer structure. The influence of doping concentrations level of both a-Si:H and c-Si layer on the current density is also calculated.