Грабіщенко, Я. О.2023-07-112023-07-112023Грабіщенко Я. О. Одноелектронні транзистори / Я. О. Грабіщенко, О. Ю. Бабиченко // Радіоелектроніка та молодь у XXI столітті : матеріали 27-го Міжнародн. молод. форума, 2023 р. - Харків : ХНУРЕ, 2023. - Т. 1- С. 33-34.УДК 621.38.049.77https://openarchive.nure.ua/handle/document/23688The report considers the principle of operation of a single-electron transistor and its structure. A single-electron transistor is a transistor, the main parameters of which are high-speed operation and low energy consumption, which is based on the possibility of obtaining noticeable values of current changes by manipulating individual electrons when they pass through a tunnel junction. The purpose of creating such transistors is to reduce energy consumption, heat generation, significantly increase the speed and compactness of microcircuit elements.uksingle-electron transistorstructuretransistormicrocircuit elementsConference proceedings