Слабый, К. Г.Пащенко, А. Г.2019-04-222019-04-222017Слабый К. Г. Элемент энергонезависимой памяти на основе квантовых точек / К. Г. Слабый, А. Г. Пащенко // Радіоелектроніка та молодь у ХХІ столітті : зб. тез. доп. ХХI Харків. конф. молодих науковців, 25–27 квіт. 2017 р. – Харків, 2017. – С. 63.http://openarchive.nure.ua/handle/document/8446This paper proposes a perspective flash memory element which is used as a storage cell array of self-assembled quantum dots as an intermediate layer in the structure of a field effect transistor with modulated doping. Described the physical basis of information storage in the proposed memory cell. A schematic structure of the element and its operation of recording, reading and erasing of information storage studied based on GaAs / AlGaAs MODFET transistor structure. Structure of a layer of quantum dots is grown on the principle of Stranski–Krastanov growth mechanism.ruЭнергонезависимая памятьКвантовые точкиArticle