Gryshchenko, S. V.Demin, A.Lysak, V.Sukhoivanov, I.2016-10-032016-10-032011http://openarchive.nure.ua/handle/document/3122We present a theoretical analysis of the quantum efficiency of a resonant cavity enhanced InGaAs/GaAs P-i-n photodetector (PD) for the ultrashort optical connections. The numerical method of calculation of quantum efficiency combining a transfer matrix method and an energy conservation law is offered. Using anomalous dispersion (AD) mirror flattopped QE spectrum has been obtained. Conditions for ideal flattopped spectral response have been received. A design with a maximum QE of 93.5% and 3 nm bandwidth at 0.02 dB below the peak is presented.enresonant-cavity enhanced photodetectorquantum efficiencyInfluence of anomalous dispersion mirror properties on the quantum efficiency of InGaAs/GaAs resonant cavity photodetectorArticle