Chumakov, V. I.2018-01-252018-01-252000http://openarchive.nure.ua/handle/document/4229References: 1. Wunsch D.S., Bell R.R. IEEE Trans. on Nuclear. Sci. 1968.NS.15, No.6. P.244-259. 2. Dwyer V.M., Franklin A.J., Campbell D.S. IEEE Trans. on Electron Dev. 1990, ED.37 N î .11, pp.2381-2387. 3. Simulation of radioelectronic devices thermal failures / V.I. Chumakov // Radioelektronika i informatika ,1992, N 2, p.31-37. 4. Virchenko Yu.P., Vodyanitskii À.A., Kovtun G.P. Preprint, Kharkov: KhIFT, 1992, 32 p. (in Russian). 5. Galaktionov V.À., Kurdyumov S.P., Posashkov S.À Samarskii A..À. In : Mathematic modeling. Processes in nonlinear medium. Moskow: Nauka, 1986, p.142-182 (in Russian). 6. Blakemore J. Solid state physics. Moskov: Mir. 1988. (in Russian). 7. Carroll J. Microwave generator on hot electrons. Moskow: Mir, 1972.The linear heat model of degradations of semiconductor devices under pulsed electric overloading has been constructed. Expressions for temporal depende ncies of the temperature under different forms of pulse of current are obtainedDEGRADATIONS, SEMICONDUCTOR DEVICES, PULSED HEAT OVERLOADINGArticle