Theoretical Study of Optical Transition Matrix Elements in InGaN/GaN SQW Subject to Indium Surface Segregation

Публікація:
Theoretical Study of Optical Transition Matrix Elements in InGaN/GaN SQW Subject to Indium Surface Segregation

dc.contributor.author	Klymenko, M.
dc.contributor.author	Shulika, O.
dc.contributor.author	Sukhoivanov, I.
dc.date.accessioned	2016-10-03T10:58:34Z
dc.date.available	2016-10-03T10:58:34Z
dc.date.issued	2011
dc.description.abstract	We investigate the dependence of dipole matrix elements for InGaN/GaN single quantum well structures on the indium surface segregation. Obtained results show that the influence of the surface segregation on the dipole matrix element is not equal for all optical transition. This effect results from the joint action of the piezoelectric polarization and indium surface segregation which change selection rules. In addition, surface segregations at each interface of the quantum well have different impact on optical characteristics depending on the direction of the piezoelectric polarization. The effect of the surface segregation has been estimated applying the global sensitivity analysis in the frame of six-band approximation for the valence band and parabolic approximation for the conduction band.	uk_UA
dc.identifier.uri	http://openarchive.nure.ua/handle/document/3125
dc.language.iso	en	uk_UA
dc.publisher	Journal of Selected Topics in Quantum Electronics	uk_UA
dc.subject	Nitrogen compounds	uk_UA
dc.subject	Piezoelectric semiconductors	uk_UA
dc.title	Theoretical Study of Optical Transition Matrix Elements in InGaN/GaN SQW Subject to Indium Surface Segregation	uk_UA
dc.type	Article	uk_UA
dspace.entity.type	Publication