Influence of anomalous dispersion mirror properties on the quantum efficiency of InGaAs/GaAs resonant cavity photodetector

Публікація:
Influence of anomalous dispersion mirror properties on the quantum efficiency of InGaAs/GaAs resonant cavity photodetector

dc.contributor.author	Gryshchenko, S. V.
dc.contributor.author	Demin, A.
dc.contributor.author	Lysak, V.
dc.contributor.author	Sukhoivanov, I.
dc.date.accessioned	2016-10-03T10:34:50Z
dc.date.available	2016-10-03T10:34:50Z
dc.date.issued	2011
dc.description.abstract	We present a theoretical analysis of the quantum efficiency of a resonant cavity enhanced InGaAs/GaAs P-i-n photodetector (PD) for the ultrashort optical connections. The numerical method of calculation of quantum efficiency combining a transfer matrix method and an energy conservation law is offered. Using anomalous dispersion (AD) mirror flattopped QE spectrum has been obtained. Conditions for ideal flattopped spectral response have been received. A design with a maximum QE of 93.5% and 3 nm bandwidth at 0.02 dB below the peak is presented.	uk_UA
dc.identifier.uri	http://openarchive.nure.ua/handle/document/3122
dc.language.iso	en	uk_UA
dc.publisher	J. Opto-Electronics Review	uk_UA
dc.subject	resonant-cavity enhanced photodetector	uk_UA
dc.subject	quantum efficiency	uk_UA
dc.title	Influence of anomalous dispersion mirror properties on the quantum efficiency of InGaAs/GaAs resonant cavity photodetector	uk_UA
dc.type	Article	uk_UA
dspace.entity.type	Publication