Radiation sensitive integrated detectors based on compounds AIIBVI

Публікація:
Radiation sensitive integrated detectors based on compounds AIIBVI

dc.contributor.author	Галат, А. Б.
dc.contributor.author	Гашин, П. А.
dc.contributor.author	Гринев, Б. В.
dc.contributor.author	Старжинский, Н. Г.
dc.contributor.author	Зеня, И. М.
dc.date.accessioned	2018-07-31T07:02:35Z
dc.date.available	2018-07-31T07:02:35Z
dc.date.issued	2007
dc.description.abstract	Methods are considered of preparation of photosensitive structures nZnSe(Te)–pZnTe and ZnSe(Te)/pZnTe–nCdSe using solid-phase substitution reactions and subsequent epitaxial growth on crystals ZnSe(Te) . It has been shown that maximum e.m.f. value for integrated detectors is 1,2-1,4 V, and their X-ray sensitivity reaches values up to 150-200 nAmin/Rcm2.	uk_UA
dc.identifier.citation	Galat A. B. Radiation sensitive integrated detectors based on compounds AIIBVI / A. B. Galat, P. A. Gashin, B. V. Grinyov, N.G. Starzhinskiy, I.M. Zenya//Радиотехника. Всеукр. межвед. науч.-техн. сб.,2007. –Вып. 150. –С.148–150.	uk_UA
dc.identifier.uri	http://openarchive.nure.ua/handle/document/6711
dc.language.iso	en	uk_UA
dc.publisher	ХНУРЕ	uk_UA
dc.subject	scintillators	uk_UA
dc.subject	radiation	uk_UA
dc.subject	detector	uk_UA
dc.title	Radiation sensitive integrated detectors based on compounds AIIBVI	uk_UA
dc.type	Article	uk_UA
dspace.entity.type	Publication