Quantum Efficiency of the InGaAS/GaAs Resonant Photodetector for the Ultrashort Optical Connections

Публікація:
Quantum Efficiency of the InGaAS/GaAs Resonant Photodetector for the Ultrashort Optical Connections

dc.contributor.author	Gryshchenko, S. V.
dc.contributor.author	Dyomin, A. A
dc.contributor.author	Lysak, V. V.
dc.contributor.author	Petrov, S. I.
dc.date.accessioned	2016-07-08T07:40:38Z
dc.date.available	2016-07-08T07:40:38Z
dc.date.issued	2007
dc.description.abstract	A theoretical analysis has been conducted for the quantum efficiency of an InGaAs/GaAs resonant cavity p-i-n photodetector for the ultrashort optical connections. The quantum efficiency at resonance has been estimated. The mathematical model allows for the physical parameters of the photodetector, radiation wavelength, mirror reflectivity and optical absorption in all detector layers. The relations between the quantum efficiency and the reflection coefficient of the upper mirror of the Al0.65Ga0.35As/GaAs resonator in combination with other variable parameters of the structure have been determined. The magnitudes of the upper mirror reflection coefficient depending on physical parameters of the structure have been found.	uk_UA
dc.identifier.uri	http://openarchive.nure.ua/handle/document/1381
dc.language.iso	en	uk_UA
dc.publisher	Begell House, Inc.	uk_UA
dc.subject	Resonant cavity detector	uk_UA
dc.subject	quantum efficiency Detectors	uk_UA
dc.subject	Ultrashort connections	uk_UA
dc.title	Quantum Efficiency of the InGaAS/GaAs Resonant Photodetector for the Ultrashort Optical Connections	uk_UA
dc.type	Article	uk_UA
dspace.entity.type	Publication